30-inch carbon nanotube based field emission display
May 12, 2004 |
3.3 / 5 (15) |
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Samsung demonstrated a working carbon nanotube display prototype in 1999, and has almost completed the development of a field emission display (FED) with a 30-inch diagonal screen, according to a Korea Times ...
Intel's Breakthrough in High-K Gate Dielectric Drives Moore's Law Well into the Future
May 12, 2004 |
3.6 / 5 (5) |
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After several years of effort, the Intel technology team has made a major breakthrough that solves the chip power problem. Intel has identified a new material known as "high-K" to replace SiO2 as the gate dielectric, ...
Nanoimprint lithography continues to advance
Physics /
May 12, 2004 |
3 / 5 (4) |
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Nanoimprint is an emerging lithographic technology that promises high-throughput patterning of nanostructures. Based on the mechanical embossing principle, nanoimprint technique can achieve pattern resolutions ...
Fullerenes and nanotubes are back in the news
Physics /
May 12, 2004 |
3.5 / 5 (2) |
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Shaped carbon molecules are known officially as fullerenes and unofficially as ''buckyballs''. The news blurbs about Carbon-50, self-assemble nanotubes and fullerene transistors are circulating around the Net. ...
Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si<sub>1–x</sub>Ge<sub>x</sub> films
Physics /
May 12, 2004 |
3 / 5 (1) |
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The latest issue of Journal of Applied Physics (Vol. 95, No. 10, pp. 5301–5304) publishes the work of S. K. Ray and a group of scientists who demonstrated absorption and reflection characteristics of boron-doped si ...
Intel® Centrino™ Mobile Technology Innovation Enhances Consumer And Business Mobile Lifestyles
May 12, 2004 |
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SANTA CLARA, Calif., May 10, 2004 - Intel Corporation is shipping three new Intel® Pentium® M processors, boosting the performance of Intel® Centrino™ mobile technology to enhance the way people work, play and communicate ...
SAMSUNG Enables 3D Gaming on Cellular Handsets
May 12, 2004 |
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Mobile DDR x 32 memory device breaks the 1Gbyte-per-second data transfer rate barrier SEOUL , KOREA , May 12 , 2004 - SAMSUNG Electronics Co., Ltd., the world leader in advanced semiconductor memory technology, ...
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