Thin virtual substrates for strained Si
Physics /
May 26, 2004 |
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D. Chrastina and his colleagues from the Politecnico di Milano and the ETH Zurich have developed a method to grow thin relaxed SiGe virtual substrates by low-energy plasma-enhanced chemical vapor deposition (LEPECVD). ...
High-K Progress Towards 45 nm
May 26, 2004 |
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STMicroelectronics, CEA-Leti and AIXTRON Develop Ultra-Thin Gate-Insulation Process for Advanced CMOS Transistors Geneva, May 26, 2004 - STMicroelectronics today announced that ST, CEA-Leti and AIXTRON have developed an ...
Cadence Delivers 90-Nanometer Reference Flow to Optimize Nanometer Design for IBM-Chartered Process Platform
May 26, 2004 |
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Cadence Encounter-Based Reference Flow to Provide High Quality of Silicon for Complex 90-Nanometer System-on-Chip Designs San Jose, CA , May 24, 2004 Cadence Design Systems, Inc. (NYSE:CDN) today announced the availabil ...
TOSHIBA DEBUTS FIRST FULL-COLOR 'SYSTEM ON GLASS' (SOG) INPUT DISPLAY WITH IMAGE CAPTURE TECHNOLOGY
May 26, 2004 |
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New Color LCD Prototype, which Captures High-Resolution Digital Content via Embedded Sensors, to be Demonstrated at SID 2004 in Seattle SEATTLE, May 25, 2004 - In an effort further develop leading-edge system on glass (SOG) dis ...
USING “SMART FLUIDS” TO RETRAIN MUSCLES
Physics /
May 26, 2004 |
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(5-20-04) Boston, Mass. -- Physical rehabilitation has traditionally consisted of arduously retraining the body on weight machines and other resistance devices, but with the growing interest in “smart fluids,” ...
UMC Announces a Device Technique that Enhances Silicon-on-Insulator (SOI) Transistor Performance
May 26, 2004 |
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HSINCHU, Taiwan, May 26, 2004 -- UMC, a world leading semiconductor foundry, today announced the discovery of a new engineering technique that enhances Silicon-on-Insulator (SOI) transistor performance. The Direct-Tunneling induce ...
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