Fujitsu Develops Technology for High-Reliability Gallium Nitride HEMT

Fujitsu Laboratories today announced the development of a new high-reliability technology for high power gallium nitride (GaN) high electron-mobility transistors (HEMT), paving the way for commercialization of high power GaN HEMTs.

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<p><a href="http://www.physorg.com/news101741135.html">Fujitsu Develops Technology for High-Reliability Gallium Nitride HEMT</a></p> <p>Fujitsu Laboratories today announced the development of a new high-reliability technology for high power gallium nitride (GaN) high electron-mobility transistors (HEMT), paving the way for commercialization of high power GaN HEMTs.</p>