World's first MOSFETs with epitaxial Gd2O3

Researchers at AMICA and Technical University of Darmstadt have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material and bulk silicon with a crystalline gadolinium oxide (Gd₂O₃) gate dielectric.

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<p><a href="http://www.physorg.com/news10532.html">World's first MOSFETs with epitaxial Gd2O3</a></p> <p>Researchers at AMICA and Technical University of Darmstadt have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material and bulk silicon with a crystalline gadolinium oxide (Gd₂O₃) gate dielectric.</p>