Samsung Electronics Develops Industry’s Highest–Capacity Multi-Chip Package for 3G Mobile Phones

Samsung Electronics Develops Industry’s Highest–Capacity Multi-Chip Package for 3G Mobile Phones

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor memory technology, announced today that it has developed a 2.5Gigabit (Gb) four-die multi-chip package (MCP) designed for use in third generation mobile phones. Samsung’s newest MCP, with 2Gbs of NAND Flash and 512Mbs of mobile DRAM, is the highest capacity memory device currently available for mobile applications. By combining more multimedia data storage at a low power consumption rate, this MCP offers cell phone designers the ability to add new functionality to next generation mobile phones without sacrificing space or performance.

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<a href="http://www.physorg.com/news1067.html">Samsung Electronics Develops Industry’s Highest–Capacity Multi-Chip Package for 3G Mobile Phones</a> <a class="directory" href="http://www.physorg.com/search/Samsung ">Samsung Electronics Co., Ltd.</a>, the world leader in advanced semiconductor <a class="directory" href="http://www.physorg.com/search/memory">memory</a> technology, announced today that it has developed a 2.5Gigabit (Gb) four-die multi-chip package (MCP) designed for use in third generation mobile phones. Samsung’s newest MCP, with 2Gbs of <a class="directory" href="http://www.physorg.com/search/NAND">NAND</a> Flash and 512Mbs of mobile DRAM, is the highest capacity memory device currently available for mobile applications. By combining more multimedia data storage at a low power consumption rate, this MCP offers cell phone designers the ability to add new functionality to next generation mobile phones without sacrificing space or performance.