Thin virtual substrates for strained Si

D. Chrastina and his colleagues from the Politecnico di Milano and the ETH Zurich have developed a method to grow thin relaxed SiGe virtual substrates by low-energy plasma-enhanced chemical vapor deposition (LEPECVD). Self-heating of field-effect transistors on these virtual substrates is much reduced while the maximum oscillation and transit frequencies remain very high. LEPECVD is shown to be an excellent deposition technique for next generation integrated circuit technology.

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<p><a href="http://www.physorg.com/news108.html">Thin virtual substrates for strained Si</a></p> <p>D. Chrastina and his colleagues from the Politecnico di Milano and the ETH Zurich have developed a method to grow thin relaxed SiGe virtual substrates by low-energy plasma-enhanced chemical vapor deposition (LEPECVD). Self-heating of field-effect transistors on these virtual substrates is much reduced while the maximum oscillation and transit frequencies remain very high. LEPECVD is shown to be an excellent deposition technique for next generation integrated circuit technology. </p>