Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band

Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz, the highest level of performance yet reported at this frequency band.

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<p><a href="http://www.physorg.com/news111167375.html">Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band</a></p> <p>Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz, the highest level of performance yet reported at this frequency band.</p>