Novel gate dielectric materials: perfection is not enough

For the first time theoretical modeling has provided a glimpse into how promising dielectric materials are able to trap charges, something which may affect the performance of advanced electronic devices. This is revealed in a paper published on the 12th October in Physical Review Letters by researchers at the London Centre for Nanotechnology and SEMATECH, a company in Austin, Texas.

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<p><a href="http://www.physorg.com/news111759778.html">Novel gate dielectric materials: perfection is not enough</a></p> <p>For the first time theoretical modeling has provided a glimpse into how promising dielectric materials are able to trap charges, something which may affect the performance of advanced electronic devices. This is revealed in a paper published on the 12th October in Physical Review Letters by researchers at the London Centre for Nanotechnology and SEMATECH, a company in Austin, Texas.</p>