Toshiba develops new MRAM device which opens the way to giga-bits capacity

Toshiba Corporation today announced important breakthroughs in key technologies for magnetoresistive random access memory (MRAM), a promising, next-generation semiconductor memory device.

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<p><a href="http://www.physorg.com/news113591322.html">Toshiba develops new MRAM device which opens the way to giga-bits capacity</a></p> <p>Toshiba Corporation today announced important breakthroughs in key technologies for magnetoresistive random access memory (MRAM), a promising, next-generation semiconductor memory device.</p>