IMEC increases performance of high-k metal gate planar CMOS and FinFETs

At today’s IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates targeting the 32nm CMOS node.

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<p><a href="http://www.physorg.com/news116612153.html">IMEC increases performance of high-k metal gate planar CMOS and FinFETs</a></p> <p>At today’s IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates targeting the 32nm CMOS node.</p>