SanDisk to Launch 43-Nanometer Multi-Level NAND Flash Memory in Mass Production

SanDisk Corporation today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer process technology co-developed with Toshiba Corporation in Japan.

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<p><a href="http://www.physorg.com/news121535769.html">SanDisk to Launch 43-Nanometer Multi-Level NAND Flash Memory in Mass Production</a></p> <p>SanDisk Corporation today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer process technology co-developed with Toshiba Corporation in Japan.</p>