‘Electron Trapping’ May Impact Future Microelectronics Measurements

Using an ultra-fast method of measuring how a transistor switches from the “off” to the “on” state, researchers at the National Institute of Standards and Technology (NIST) recently reported that they have uncovered an unusual phenomenon that may impact how manufacturers estimate the lifetime of future nanoscale electronics.

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<p><a href="http://www.physorg.com/news133701665.html">‘Electron Trapping’ May Impact Future Microelectronics Measurements</a></p> <p>Using an ultra-fast method of measuring how a transistor switches from the “off” to the “on” state, researchers at the National Institute of Standards and Technology (NIST) recently reported that they have uncovered an unusual phenomenon that may impact how manufacturers estimate the lifetime of future nanoscale electronics. <br> <br></p>