New invention that could change design of future memory storage devices

A research team at Singapore A*STAR's Data Storage Institute (DSI) has invented a new phase change material that has the potential to change the design of future memory storage devices.

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<p><a href="http://www.physorg.com/news142676953.html">New invention that could change design of future memory storage devices</a></p> <p>A research team at Singapore A*STAR's Data Storage Institute (DSI) has invented a new phase change material that has the potential to change the design of future memory storage devices.</p>