Fujitsu Develops World's First GaN HEMT Able to Cut Power in Standby Mode and Achieve High Output

Fujitsu today announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a new structure ideal for use in amplifiers for microwave and millimeter-wave transmissions, frequency ranges for which usage is expected to grow.

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<p><a href="http://www.physorg.com/news142864069.html">Fujitsu Develops World's First GaN HEMT Able to Cut Power in Standby Mode and Achieve High Output</a></p> <p>Fujitsu today announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a new structure ideal for use in amplifiers for microwave and millimeter-wave transmissions, frequency ranges for which usage is expected to grow. </p>