UMC Announces Industry's First 28nm SRAMs

UMC, a leading global semiconductor foundry, today announced that it has manufactured the foundry industry's first fully functional 28nm SRAM chips. The chips are based on UMC's independently developed low-leakage (LL) process technology. UMC utilized advanced double-patterning immersion lithography and strained silicon technology to produce the chips, which feature very small six-transistor SRAM cell sizes of approximately 0.122 um2.

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<p><a href="http://www.physorg.com/news144347569.html">UMC Announces Industry's First 28nm SRAMs</a></p> <p>UMC, a leading global semiconductor foundry, today announced that it has manufactured the foundry industry's first fully functional 28nm SRAM chips. The chips are based on UMC's independently developed low-leakage (LL) process technology. UMC utilized advanced double-patterning immersion lithography and strained silicon technology to produce the chips, which feature very small six-transistor SRAM cell sizes of approximately 0.122 um2.</p>