SiGen Granted Key Strained-Silicon Substrate Patent

Silicon Genesis Corporation (SiGen) announced today that it has received a key patent in the area of fabricating strained silicon and silicon-on-insulator (SOI) substrates using a layer transfer process used in next-generation high-speed and low-power semiconductor applications.

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<p><a href="http://www.physorg.com/news1445.html">SiGen Granted Key Strained-Silicon Substrate Patent</a></p> <p>Silicon Genesis Corporation (<a class="directory" href="http://www.physorg.com/search/SiGen">SiGen</a>) announced today that it has received a key patent in the area of fabricating <a class="directory" href="http://www.physorg.com/search/strained silicon">strained silicon</a> and silicon-on-insulator (SOI) substrates <b>using a layer transfer process used in next-generation high-speed and low-power semiconductor applications</b>.</p>