Fujitsu Develops C- to X- Ultra-Wideband Gallium-Nitride HEMT Power Amplifier Featuring High Output and Efficiency

(PhysOrg.com) -- Fujitsu Laboratories announced today the development of a high-performance power amplifier based on gallium nitride (GaN) high electron mobility transistors (HEMT), which as a hybrid amplifier - an amplifier in which the transistor and capacitor are each mounted on separate semiconductor package substrates - features the world's highest output performance in terms of power and efficiency in the C-band to X-band radio frequency bandwidths above 5GHz.

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<p><a href="http://www.physorg.com/news145030127.html">Fujitsu Develops C- to X- Ultra-Wideband Gallium-Nitride HEMT Power Amplifier Featuring High Output and Efficiency</a></p> <p>(PhysOrg.com) -- Fujitsu Laboratories announced today the development of a high-performance power amplifier based on gallium nitride (GaN) high electron mobility transistors (HEMT), which as a hybrid amplifier - an amplifier in which the transistor and capacitor are each mounted on separate semiconductor package substrates - features the world's highest output performance in terms of power and efficiency in the C-band to X-band radio frequency bandwidths above 5GHz. </p>