Toshiba, IBM, AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate

Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm²), the world’s smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs).

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<p><a href="http://www.physorg.com/news148751844.html">Toshiba, IBM, AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate</a></p> <p>Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm²), the world’s smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs).</p>