Scientists demonstrate effect of confining dielectrics on semiconductor nanowire conductivity

Researchers at the Harvard School of Engineering and Applied Sciences (SEAS), in collaboration with researchers from Worcester Polytechnic Institute (WPI), have demonstrated, for the first time, that the activation energy of impurities in semiconductor nanowires is affected by the surrounding dielectric and can be modified by the choice of the nanowire embedding medium.

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<p><a href="http://www.physorg.com/news160754028.html">Scientists demonstrate effect of confining dielectrics on semiconductor nanowire conductivity</a></p> <p>Researchers at the Harvard School of Engineering and Applied Sciences (SEAS), in collaboration with researchers from Worcester Polytechnic Institute (WPI), have demonstrated, for the first time, that the activation energy of impurities in semiconductor nanowires is affected by the surrounding dielectric and can be modified by the choice of the nanowire embedding medium.</p>