Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply

Fujitsu Laboratories today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(HEMT) that can minimize power loss in power supplies, thus enabling reduced power consumption of electronic equipment such as IT hardware and home electronics.

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<p><a href="http://www.physorg.com/news165081213.html">Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply</a></p> <p>Fujitsu Laboratories today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(HEMT) that can minimize power loss in power supplies, thus enabling reduced power consumption of electronic equipment such as IT hardware and home electronics.</p>