Record-breaking performance of 90-nm RF CMOS process takes advanced development to new levels
At this year's IEEE International Electron Devices Meeting (IEDM, San Francisco, USA, 13 - 15 December 2004), Philips' R&D scientists will be contributing to no less than 17 different papers on advanced semiconductor research and development. Detailing R&D carried out by Philips in collaboration with IMEC (Belgium) and the Crolles2 Alliance (a partnership between Philips, Freescale Semiconductor and STMicroelectronics) the majority of these papers cover CMOS process development at the 65-nm and 45-nm nodes, and record-breaking RF CMOS performance at the 90-nm node. The primary focus for Philips is the development of advanced CMOS processes that are compatible with the high-volume low-cost manufacturing requirements of consumer-product applications.