Infineon Presents Cutting Edge Research Results in Non-Volatile Memory Technologies

Munich, Germany – June 22, 2004 – Infineon Technologies is leading in the development of new non-volatile memory technologies. At the 2004 Symposia on VLSI Technologies and Circuits, June 15 - 19 in Honolulu, Hawaii, Infineon Technologies presented promising results on a broad range of non-volatile technologies for future memory products. Read about:

- 110nm NROM Technology for Code and Data Flash Products
- Infineon Explores FinFET Sub-40nm Oxide-Nitride-Oxide Transistors for High-Density Flash memory in the 16Gbit Range
- FeRAM - Small and Highly Scalable 3-Dimensional FeRAM Cell with Vertical Capacitor

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<p><a href="http://www.physorg.com/news232.html">Infineon Presents Cutting Edge Research Results in Non-Volatile Memory Technologies</a></p> <p>Munich, Germany – June 22, 2004 – Infineon Technologies is leading in the development of new non-volatile memory technologies. At the 2004 Symposia on VLSI Technologies and Circuits, June 15 - 19 in Honolulu, Hawaii, Infineon Technologies presented promising results on a broad range of non-volatile technologies for future memory products. Read about: <br /> <br /> <b>- 110nm NROM Technology for Code and Data Flash Products</b> <br /> <b>- Infineon Explores FinFET Sub-40nm Oxide-Nitride-Oxide Transistors for High-Density Flash memory in the 16Gbit Range</b> <br /> <b>- FeRAM - Small and Highly Scalable 3-Dimensional FeRAM Cell with Vertical Capacitor</b></p>