IMEC reports record in tall triple-gate device SRAM cell for 45nm node

At today’s IEEE International Electron Devices Meeting in San Francisco, IMEC, Europe’s largest independent nanoeelctronics and nanotechnology research center, announced that it had achieved the smallest triple-gate device SRAM cell reported to date. IMEC’s device is a fully working 6-transistor SRAM cell with an area of only 0.314mm².

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<p><a href="http://www.physorg.com/news2341.html">IMEC reports record in tall triple-gate device SRAM cell for 45nm node</a></p> <p>At today’s IEEE International Electron Devices Meeting in San Francisco, <a class="directory" href="http://www.physorg.com/search/IMEC">IMEC</a>, Europe’s largest independent nanoeelctronics and nanotechnology research center, announced that it had achieved the smallest triple-gate device SRAM cell reported to date. IMEC’s device is a fully working 6-transistor <a class="directory" href="http://www.physorg.com/search/SRAM">SRAM</a> cell with an area of only 0.314mm². </p>