Toshiba and NEC Develop Key Technologies for High-Density MRAM

Toshiba Corporation and NEC Corporation today announced two key advancements toward development of a magnetoresistive random access memory, a technology seen as key to the development of future generations of high performance mobile equipment. Unveiling the latest fruits of a joint development program dating back to 2002, the two companies announced a new cell design that halves power consumption during data writes and cuts writing errors, and a novel MRAM architecture with high speed characteristics and a performance that will support development of high-density devices.

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<p><a href="http://www.physorg.com/news2378.html">Toshiba and NEC Develop Key Technologies for High-Density MRAM</a></p> <p> Toshiba Corporation and NEC Corporation today announced two key advancements toward development of a magnetoresistive random access memory, a technology seen as key to the development of future generations of high performance mobile equipment. Unveiling the latest fruits of a joint development program dating back to 2002, the two companies announced a new cell design that halves power consumption during data writes and cuts writing errors, and a novel MRAM architecture with high speed characteristics and a performance that will support development of high-density devices.</p>