Matsushita Develops the AlGaN/GaN Power FET on Silicon Substrate

Matsushita's novel technology achieves a low-cost, low-loss fast switching device with 1/10 on-state resistance of Si power MOS

Matsushita Electric Industrial Co., Ltd., best known for its Panasonic brand products, today announced the development of a new transistor to revolutionize switching devices. The new transistor can be used as a low-loss power switching device in applications like inverters for home electric appliances, hybrid cars and switching power supplies.

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<p><a href="http://www.physorg.com/news2380.html">Matsushita Develops the AlGaN/GaN Power FET on Silicon Substrate</a></p> <p><b><i>Matsushita's novel technology achieves a low-cost, low-loss fast switching device with 1/10 on-state resistance of Si power MOS </b></i> <br> <br>Matsushita Electric Industrial Co., Ltd., best known for its Panasonic brand products, today announced the development of a new transistor to revolutionize switching devices. The new transistor can be used as a low-loss power switching device in applications like inverters for home electric appliances, hybrid cars and switching power supplies.</p>