Infineon Introduces Next-Generation GOLDMOS® Technology and High-Power RF Transistors for High Linear Efficiency

Munich, Germany – June 28, 2004 – Infineon Technologies AG is introducing the next generation of its GOLDMOS® LDMOS (laterally diffused metal-oxide semiconductor) die technology for high-performance, high-power RF transistors that will enable amplifier developers to design more reliable and cost-effective linear amplifiers. In addition to leading-edge linear efficiency, ultra-wide-bandwidth performance and reduced memory effect, the new Infineon GOLDMOS High-Power RF Transistors will provide the industry’s best thermal performance. The GOLDMOS transistors will be integrated into products designed for use in UMTS/WCDMA, GSM, CDMA, EDGE, TDSCDMA, PCS/DCS, MMDS, TV broadcast and DAB amplifiers.

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<p><a href="http://www.physorg.com/news261.html">Infineon Introduces Next-Generation GOLDMOS® Technology and High-Power RF Transistors for High Linear Efficiency</a></p> <p>Munich, Germany – June 28, 2004 – Infineon Technologies AG is introducing the next generation of its GOLDMOS® LDMOS (laterally diffused metal-oxide semiconductor) die technology for high-performance, high-power RF transistors that will enable amplifier developers to design more reliable and cost-effective linear amplifiers. In addition to leading-edge linear efficiency, ultra-wide-bandwidth performance and reduced memory effect, the new Infineon GOLDMOS High-Power RF Transistors will provide the industry’s best thermal performance. The GOLDMOS transistors will be integrated into products designed for use in UMTS/WCDMA, GSM, CDMA, EDGE, TDSCDMA, PCS/DCS, MMDS, TV broadcast and DAB amplifiers. </p>