Inotera announces the successful pilot run of its 300 mm production facility

Inotera Memories, Inc., a joint venture by Infineon Technologies AG and Nanya Technology Corporation, announced the successful completion of its first pilot lot of 300mm (12-inch) wafers based on 110nm DRAM trench technology. The first product manufactured at Inotera’s fab is an Infineon-designed 256Mbit DDR SDRAM. Additional DRAM products are planned to follow later this year.

If you want to include this story in your blog, copy and paste this formatted text:

<p><a href="http://www.physorg.com/news287.html">Inotera announces the successful pilot run of its 300 mm production facility</a></p> <p>Inotera Memories, Inc., a joint venture by Infineon Technologies AG and Nanya Technology Corporation, announced the successful completion of its first pilot lot of 300mm (12-inch) wafers based on 110nm DRAM trench technology. The first product manufactured at Inotera’s fab is an Infineon-designed 256Mbit DDR SDRAM. Additional DRAM products are planned to follow later this year. <br /></p>