Samsung Electronics Unveils Next-generation Technology Breakthroughs

Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, presented a wide range of core next-generation technologies at the 2004 Symposia on VLSI Technology and Circuits, being held in Honolulu June 15-19. A total of 22 papers from Samsung were selected on such diverse topics as 50 nanometer (nm) and beyond next generation transistor process technology, new copper interconnection technology by introducing a new material Ruthenium (Ru), 70 nm NOR Flash and low-power DRAM technology, high capacity 64Mb Phase-change RAM (PRAM) and more.

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<p><a href="http://www.physorg.com/news312.html">Samsung Electronics Unveils Next-generation Technology Breakthroughs</a></p> <p>Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, presented a wide range of core next-generation technologies at the 2004 Symposia on VLSI Technology and Circuits, being held in Honolulu June 15-19. A total of 22 papers from Samsung were selected on such diverse topics as <b>50 nanometer (nm) and beyond next generation transistor process technology, new copper interconnection technology by introducing a new material Ruthenium (Ru), 70 nm NOR Flash and low-power DRAM technology, high capacity 64Mb Phase-change RAM (PRAM) and more</b>.</p>