Engineers Achieve Breakthroughs Enabling Implementation of High-k Dielectrics at 45 nm Technology Node

Engineers Achieve Breakthroughs Enabling Implementation of High-k Dielectrics at 45 nm Technology Node

Using a selected set of tools and processes, Sematech engineers have achieved twin breakthroughs in channel mobility and reliability of high-k/metal gate transistors, putting high-k technology for CMOS within reach at the 45 nm technology node.
The Sematech advance involves a titanium nitride (TiN) metal gate on a hafnium silicate (HfSiO) dielectric with an equivalent oxide thickness (EOT) of roughly 10 angstroms (Å), with mobility at 90 percent of the universal mobility curve for silicon dioxide (SiO₂), the historic gate dielectric material. These EOT and mobility metrics meet the 45 nm technology node specifications listed by the International Technology Roadmap for Semiconductors (ITRS).

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<a href="http://www.physorg.com/news3859.html">Engineers Achieve Breakthroughs Enabling Implementation of High-k Dielectrics at 45 nm Technology Node</a> Using a selected set of tools and processes, Sematech engineers have achieved twin breakthroughs in channel mobility and reliability of high-k/metal gate transistors, putting high-k technology for CMOS within reach at the 45 nm technology node. The Sematech advance involves a titanium nitride (TiN) metal gate on a hafnium silicate (HfSiO) dielectric with an equivalent oxide thickness (EOT) of roughly 10 angstroms (Å), with mobility at 90 percent of the universal mobility curve for silicon dioxide (SiO2), the historic gate dielectric material. These EOT and mobility metrics meet the 45 nm technology node specifications listed by the International Technology Roadmap for Semiconductors (ITRS).