Epson and Fujitsu Announce Joint Development of Next-Generation Technology for FRAM Non-Volatile Memory

Seiko Epson Corporation and Fujitsu Limited today announced their agreement for joint development of next-generation technology for Ferroelectric Random Access Memory (FRAM) non-volatile memory.

If you want to include this story in your blog, copy and paste this formatted text:

<p><a href="http://www.physorg.com/news4544.html">Epson and Fujitsu Announce Joint Development of Next-Generation Technology for FRAM Non-Volatile Memory</a></p> <p>Seiko Epson Corporation and Fujitsu Limited today announced their agreement for joint development of next-generation technology for Ferroelectric Random Access Memory (FRAM) non-volatile memory.</p>