Nano Layer Deposition; Unique Thin Film Deposition Technology Surpasses Atomic Layer Deposition in Flexibility

Tegal Corporation today announced that it has been granted United States Patents, No. 6,689,220 and 6,756,318, which enable nano layer deposition (NLD) of conformal thin films for barrier, copper seed and high-K dielectric applications in advanced microprocessor and memory device production.

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<p><a href="http://www.physorg.com/news462.html">Nano Layer Deposition; Unique Thin Film Deposition Technology Surpasses Atomic Layer Deposition in Flexibility</a></p> <p>Tegal Corporation today announced that it has been granted United States Patents, No. 6,689,220 and 6,756,318, which enable nano layer deposition (NLD) of conformal thin films for barrier, copper seed and high-K dielectric applications in advanced microprocessor and memory device production. </p>