Intel, Corning to Develop Extreme Ultraviolet Photomask Substrates for 32nm Node

Intel Corporation and Corning Incorporated have entered into an agreement to develop ultra low thermal expansion ULE glass photomask substrates required for Extreme Ultraviolet (EUV) lithography technology. These substrates are needed to develop low defect EUV photomasks to enable 32nm node high-volume production using EUV lithography.

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<p><a href="http://www.physorg.com/news4980.html">Intel, Corning to Develop Extreme Ultraviolet Photomask Substrates for 32nm Node</a></p> <p>Intel Corporation and Corning Incorporated have entered into an agreement to develop ultra low thermal expansion ULE glass photomask substrates required for Extreme Ultraviolet (EUV) <a class="directory" href="http://www.physorg.com/search/lithography">lithography</a> technology. These substrates are needed to develop low defect EUV photomasks to enable 32nm node high-volume production using EUV lithography.</p>