Infineon unveils low-noise SiGeC transistor

Germany's Infineon Technologies unveiled a silicon-germanium-carbon (SiGeC) process technology for high-performance radio-frequency semiconductor devices.

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<p><a href="http://www.physorg.com/news6188.html">Infineon unveils low-noise SiGeC transistor</a></p> <p>Germany's Infineon Technologies unveiled a silicon-germanium-carbon (SiGeC) process technology for high-performance radio-frequency semiconductor devices. </p>