Toshiba Announces Gallium Nitride Power FET With World's Highest Power Output

Toshiba Corporation today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of the gallium arsenide (GaAs) FET widely used in base stations for terrestrial and satellite microwave communications. The new transistor achieves output power of 174W at 6GHz, the highest level of performance yet reported at this frequency.

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<p><a href="http://www.physorg.com/news6420.html">Toshiba Announces Gallium Nitride Power FET With World's Highest Power Output</a></p> <p>Toshiba Corporation today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of the gallium arsenide (GaAs) FET widely used in base stations for terrestrial and satellite microwave communications. The new transistor achieves output power of 174W at 6GHz, the highest level of performance yet reported at this frequency.</p>