C₆₀ increases gain in organic-metal-semiconductor transistors

I. A. Hümmelgen and group of scientists from Brazil and UK implemented C₆₀ to metal-base transistor technology.
They used evaporated C₆₀ as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. This metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.
Recent article has been published in Applied Physics Letters (Vol. 84, No. 20, pp. 3978–3980)

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<p><a href="http://www.physorg.com/news67.html">C₆₀ increases gain in organic-metal-semiconductor transistors</a></p> <p>I. A. Hümmelgen and group of scientists from Brazil and UK implemented C₆₀ to metal-base transistor technology. <br />They used evaporated C₆₀ as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. This metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth. <br />Recent article has been published in <a href="http://apl.aip.org/" target="_blank">Applied Physics Letters</a> (Vol. 84, No. 20, pp. 3978–3980)</p>