Panasonic Develops the World's First GaN Vertical Transistor

Panasonic today announced the development of a Gallium Nitride (GaN) transistor with vertical structure which dramatically reduces the chip size comparing with the conventional planar structure. This is the world's first demonstration of GaN vertical transistor applicable to high power switching devices.

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<p><a href="http://www.physorg.com/news70724289.html">Panasonic Develops the World's First GaN Vertical Transistor</a></p> <p>Panasonic today announced the development of a Gallium Nitride (GaN) transistor with vertical structure which dramatically reduces the chip size comparing with the conventional planar structure. This is the world's first demonstration of GaN vertical transistor applicable to high power switching devices.</p>