Stress Management: X-Rays Reveal Si Thin-Film Defects

Pile-ups, bad on the freeway, also are a hazard for the makers of high-performance strained-silicon semiconductor devices. A sensitive X-ray diffraction imaging technique developed by researchers at the National Institute of Standards and Technology can help manufacturers avoid the latter—a bunching up of crystal defects caused by the manufacturing process for strained-silicon films.

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<p><a href="http://www.physorg.com/news71414552.html">Stress Management: X-Rays Reveal Si Thin-Film Defects</a></p> <p>Pile-ups, bad on the freeway, also are a hazard for the makers of high-performance strained-silicon semiconductor devices. A sensitive X-ray diffraction imaging technique developed by researchers at the National Institute of Standards and Technology can help manufacturers avoid the latter—a bunching up of crystal defects caused by the manufacturing process for strained-silicon films.</p>