Samsung Develops World's First 512-Megabit DDR2 with 70nm Process Technology

Samsung Electronics announced that it has completed development of the world-first 512-Megabit (Mb) DDR2 SDRAM using 70-nanometer process, the smallest process technology yet applied to a DRAM device.

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<p><a href="http://www.physorg.com/news7226.html">Samsung Develops World's First 512-Megabit DDR2 with 70nm Process Technology</a></p> <p> Samsung Electronics announced that it has completed development of the world-first 512-Megabit (Mb) DDR2 SDRAM using 70-nanometer process, the smallest process technology yet applied to a DRAM device. <br></p>