Samsung Introduces the Next Generation of Nonvolatile Memory - PRAM

Samsung Electronics announced that it has completed the first working prototype of what is expected to be the main memory device to replace high density NOR flash within the next decade - a Phase-change Random Access Memory (PRAM). The company unveiled the 512M-Megabit (Mb) device at its sixth annual press conference in Seoul yesterday.

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<p><a href="http://www.physorg.com/news77297204.html">Samsung Introduces the Next Generation of Nonvolatile Memory - PRAM</a></p> <p>Samsung Electronics announced that it has completed the first working prototype of what is expected to be the main memory device to replace high density NOR flash within the next decade - a Phase-change Random Access Memory (PRAM). The company unveiled the 512M-Megabit (Mb) device at its sixth annual press conference in Seoul yesterday.</p>