Nanometer bridge combines magnetic and electronic worlds

A gadolinium layer of no more than one nanometer in thickness is capable of combining the magnetic world with electronics. In this way, it will be possible to put a magnetic memory element directly to a silicon transistor: the basic building block of information technology. Memory that is directly coupled to processing power, is an attractive and energy efficient option.

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<p><a href="http://www.physorg.com/news78738829.html">Nanometer bridge combines magnetic and electronic worlds</a></p> <p>A gadolinium layer of no more than one nanometer in thickness is capable of combining the magnetic world with electronics. In this way, it will be possible to put a magnetic memory element directly to a silicon transistor: the basic building block of information technology. Memory that is directly coupled to processing power, is an attractive and energy efficient option.</p>