Samsung Develops First 50nm DRAM Chip

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry’s first 50-nanometer (nm) DDR2 DRAM (dynamic random access memory) chip, which will increase production efficiency from the 60nm level by 55 percent. The new 1-gigabit (Gb) DRAM incorporates advanced technologies such as three-dimensional (3D) transistor design and multi-layered dielectric technology, which greatly enhance performance and data storage capabilities.

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<p><a href="http://www.physorg.com/news80838245.html">Samsung Develops First 50nm DRAM Chip</a></p> <p>Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry’s first 50-nanometer (nm) DDR2 DRAM (dynamic random access memory) chip, which will increase production efficiency from the 60nm level by 55 percent. The new 1-gigabit (Gb) DRAM incorporates advanced technologies such as three-dimensional (3D) transistor design and multi-layered dielectric technology, which greatly enhance performance and data storage capabilities.</p>