Samsung Now Mass Producing First 90nm 512Mb Mobile DRAM

Samsung Electronics announced that it has started to mass produce 512Mb DRAM (dynamic random access memory) for mobile products, using 90nm circuitry. This marks the first time that 512Mb mobile DRAM will be available anywhere and the first time that nano-scale process technology will be used in the production of any mobile DRAM.

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<p><a href="http://www.physorg.com/news8166.html">Samsung Now Mass Producing First 90nm 512Mb Mobile DRAM</a></p> <p> Samsung Electronics announced that it has started to mass produce 512Mb DRAM (dynamic random access memory) for mobile products, using 90nm circuitry. This marks the first time that 512Mb mobile DRAM will be available anywhere and the first time that nano-scale process technology will be used in the production of any mobile DRAM.</p>