Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si_1–xGe_x films

The latest issue of Journal of Applied Physics (Vol. 95, No. 10, pp. 5301–5304) publishes the work of S. K. Ray and a group of scientists who demonstrated absorption and reflection characteristics of boron-doped silicon and silicon-germanium alloys in the frequency range from 1.6 to 60 THz. They found that absorption increases with doping concentration, in agreement with free carrier effects, however, saturates for wavelengths longer than about 20 µm. As compared to silicon, the attenuation increases with the Ge fraction in the alloy.

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<p><a href="http://www.physorg.com/news82.html">Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si_1–xGe_x films</a></p> <p>The latest issue of <a href="http://jap.aip.org" target="_blank">Journal of Applied Physics</a> (Vol. 95, No. 10, pp. 5301–5304) publishes the work of S. K. Ray and a group of scientists who demonstrated absorption and reflection characteristics of boron-doped silicon and silicon-germanium alloys in the frequency range from 1.6 to 60 THz. They found that absorption increases with doping concentration, in agreement with free carrier effects, however, saturates for wavelengths longer than about 20 µm. As compared to silicon, the attenuation increases with the Ge fraction in the alloy.</p>