Renesas, Grandis to Collaborate on Development of 65 nm MRAM Employing Spin Torque Transfer

Renesas Technology and Grandis, Inc. have agreed to collaborate on the development of 65 nm process MRAM (Magnetic Random Access Memory) employing spin torque transfer writing technology. Renesas Technology will start to ship microcomputers and SoC products incorporating 65 nm process STT-RAMTM in the near future.

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<p><a href="http://www.physorg.com/news8655.html">Renesas, Grandis to Collaborate on Development of 65 nm MRAM Employing Spin Torque Transfer</a></p> <p>Renesas Technology and Grandis, Inc. have agreed to collaborate on the development of 65 nm process MRAM (Magnetic Random Access Memory) employing spin torque transfer writing technology. Renesas Technology will start to ship microcomputers and SoC products incorporating 65 nm process STT-RAMTM in the near future.</p>