IMEC reports CMOS integration of Hf-based dielectrics with Ni FUSI gates

At today’s IEEE International Electron Devices Meeting, IMEC announces a simple CMOS integration scheme of a NiSi gate for NMOS and a Ni2Si gate for PMOS on HfSiON with simultaneous 2-step silicidation. The potential of this novel integration process has been proven with ring oscillator demonstration. Alternative FUSI approaches such as adding Yb to Ni FUSI allowed further tuning of the work function to lower Vt, enabling dual gate CMOS technologies based on FUSI for (sub)-45nm.

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<p><a href="http://www.physorg.com/news8849.html">IMEC reports CMOS integration of Hf-based dielectrics with Ni FUSI gates</a></p> <p>At today’s IEEE International Electron Devices Meeting, IMEC announces a simple CMOS integration scheme of a NiSi gate for NMOS and a Ni2Si gate for PMOS on HfSiON with simultaneous 2-step silicidation. The potential of this novel integration process has been proven with ring oscillator demonstration. Alternative FUSI approaches such as adding Yb to Ni FUSI allowed further tuning of the work function to lower Vt, enabling dual gate CMOS technologies based on FUSI for (sub)-45nm.</p>