Carbon nanotubes get a lot of press attention, but boron nitride (BN) nanotubes might have superior properties. K.H. Khoo and his colleagues form University of California performed first-principles calculations on BN nanotubes in the presence of a transverse electric field and found that these systems exhibit dramatic decrease in band gap when subject to strong fields. This effect should be realizable experimentally for the 5 nm or more diameter BN nanotubes, and it may be very important for tuning the band gap of BN nanotubes for practical applications.