Toshiba's breakthrough in SSRM technology will Improve Cutting-Edge LSI

Toshiba Corp. today announced that it has achieved a breakthrough in imaging electron-carrier paths and impurities in semiconductors that allows analysis at the 1-nanometer level for the first time. This major advance, based on scanning spreading resistance microscopy (SSRM) is an essential step toward achieving LSI at the 45nm generation and beyond.

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<p><a href="http://www.physorg.com/news95956441.html">Toshiba's breakthrough in SSRM technology will Improve Cutting-Edge LSI</a></p> <p>Toshiba Corp. today announced that it has achieved a breakthrough in imaging electron-carrier paths and impurities in semiconductors that allows analysis at the 1-nanometer level for the first time. This major advance, based on scanning spreading resistance microscopy (SSRM) is an essential step toward achieving LSI at the 45nm generation and beyond.</p>