Samsung Electronics Develops New, Highly Efficient Stacking Process for DRAM

Samsung Electronics today announced that it has developed the first all-DRAM stacked memory package using 'through silicon via' (TSV) technology, which will soon result in memory packages that are faster, smaller and consume less power.

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<p><a href="http://www.physorg.com/news96826756.html">Samsung Electronics Develops New, Highly Efficient Stacking Process for DRAM</a></p> <p>Samsung Electronics today announced that it has developed the first all-DRAM stacked memory package using 'through silicon via' (TSV) technology, which will soon result in memory packages that are faster, smaller and consume less power.</p>