Success of 45 nm Node Technology for MuGFET, a Next-Generation Transistor

ATDF, Inc. with assistance from HPL Technologies, Inc. of San Jose, has successfully demonstrated process capability at the 45 nm technology node for a multi-gate field effect transistor (MuGFET), an advanced semiconductor device that eventually could replace conventional CMOS transistors.

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<p><a href="http://www.physorg.com/news994.html">Success of 45 nm Node Technology for MuGFET, a Next-Generation Transistor</a></p> <p>ATDF, Inc. with assistance from HPL Technologies, Inc. of San Jose, has <b>successfully demonstrated process capability at the <a class="directory" href="http://www.physorg.com/search/45%20nm">45 nm</a> <a class="directory" href="http://www.physorg.com/search/technology">technology</a> node for a multi-gate field effect <a class="directory" href="http://www.physorg.com/search/transistor">transistor</a> (<a class="directory" href="http://www.physorg.com/search/MuGFET">MuGFET</a>)</b>, an advanced semiconductor device that eventually could replace conventional <a class="directory" href="http://www.physorg.com/search/CMOS">CMOS</a> transistors. </p>