Elpida Memory Develops Two New High-Speed DRAM Technologies Designed to Increase IT Infrastructure Performance

The first technology, developed in cooperation with Hitachi, Ltd., accelerates route-finding in network routers and cache memory applications in servers. The technology incorporates high-speed memory arrays that use two memory cells per bit called "twin-cell memory", along with a high-speed data amplification method called "three-stage sensing". Based on these technologies, a 144 Megabit prototype was fabricated and evaluated using Elpida's original 0.11-micron DRAM process for general-purpose DRAM. The prototype achieves exceptional performance with random access time comparable to fast SRAM.

The second new technology developed is a circuit technique for 1 Gigabit DRAM devices that supports both DDR1 and DDR2 on a single chip by combining high speed with high layout efficiency. Incorporated in 1 Gigabit mass-production chips, the technology enables high-speed data rates of 400 Megabits per second (Mbps) for DDR1 and 800 Mbps for DDR2, making it possible to offer large-capacity, high-speed memory for servers and high-end PCs.

The original press release can be found here.